The Seebeck Coefficient of Bismuth

Presentation Type

Poster/Portfolio

Presenter Major(s)

Physics

Mentor Information

Ross Reynolds, Harold Schnyders

Department

Physics

Location

Henry Hall Atrium 13

Start Date

10-4-2013 1:00 PM

End Date

10-4-2013 2:00 PM

Keywords

Physical Science, Technology

Abstract

This experiment was performed to determine the Seebeck Coefficient of Bismuth using a cylindrical sample near room temperature (21°C). The Seebeck Coefficient is a measure of an induced voltage across two ends of a given material under a small temperature gradient. This temperature difference causes electric charge carriers in the material to move from the warmer end of the material to the colder end, causing a potential difference. A simple relationship is used to determine the Seebeck Coefficient, S=V/T, where V is the potential difference between two ends subject to a temperature difference; T. The ratio of our measured voltage to the temperature difference was positive indicating that the charge carriers in Bismuth are electrons. Our data shows an average experimental value of 62.2 (µV)/K which implies that the Seebeck Coefficient of Bismuth is -62.2 (µV)/K which compares well with the accepted value of -70 (µV)/K.

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Apr 10th, 1:00 PM Apr 10th, 2:00 PM

The Seebeck Coefficient of Bismuth

Henry Hall Atrium 13

This experiment was performed to determine the Seebeck Coefficient of Bismuth using a cylindrical sample near room temperature (21°C). The Seebeck Coefficient is a measure of an induced voltage across two ends of a given material under a small temperature gradient. This temperature difference causes electric charge carriers in the material to move from the warmer end of the material to the colder end, causing a potential difference. A simple relationship is used to determine the Seebeck Coefficient, S=V/T, where V is the potential difference between two ends subject to a temperature difference; T. The ratio of our measured voltage to the temperature difference was positive indicating that the charge carriers in Bismuth are electrons. Our data shows an average experimental value of 62.2 (µV)/K which implies that the Seebeck Coefficient of Bismuth is -62.2 (µV)/K which compares well with the accepted value of -70 (µV)/K.